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| FDMB506P December 2005 FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features * -6.8 A, -20V. RDS(ON) = 30 m @ VGS = -4.5V RDS(ON) = 38 m @ VGS = -2.5V RDS(ON) = 70 m @ VGS = -1.8V * Low profile - 0.8 mm maximum * Fast switching Applications * Load switch * DC/DC Conversion * RoHS compliant PIN 1 GATE S D SOURCE 5 6 7 8 4 3 2 1 G D D D D D MicroFET 3x1.9 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1a) Units V V A W C -6.8 70 1.9 -55 to +150 (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 65 208 C/W Package Marking and Ordering Information Device Marking 506 Device FDMB506P Reel Size 7'' Tape width 8mm Quantity 3000 units 2005 Fairchild Semiconductor Corporation FDMB506P Rev C1(W) FDMB506P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V Min Typ Max -20 -13 -1 100 Units V mV/C A nA Off Characteristics On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -6.8 A VGS = -2.5 V, ID = -2.5 A VGS = -1.8 V, ID = -1.8 A VGS= -4.5 V, ID = -6.8 A, TJ=125C VDS = -5 V, ID = -6.8 A -0.4 -0.7 3 25 30 40 36 26 -1.5 V mV/C 30 38 70 44 m gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Forward Transconductance S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 2216 351 167 2960 470 260 25 16 280 128 30 pF pF pF ns ns ns ns nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 14 8 175 80 VDS = -10 V, VGS = -4.5 V ID = -6.8 A, 21 3.5 4.5 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -0.8 A(Note 2) -0.6 26 12 1.6 -1.2 48 22 A V nS nC IF = -6.8 A, diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when 2 mounted on a 1in pad of 2 oz copper b) 160C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDMB506P Rev C1(W) FDMB506P Dimensional Outline and Pad Layout NOTES: A. B. C. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION, MO-229, DATED 11/2001. DIMENSIONS ARE IN MILLIMETERS. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 FDMB506P Rev C1(W) FDMB506P Typical Characteristics 50 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=-4.5V -3.5V -3.0V -2.5V 2.2 VGS=-1.8V -ID, DRAIN CURRENT (A) 40 2 1.8 1.6 1.4 1.2 1 0.8 -2.0V -2.5V -3.0V -3.5V -4.5V 30 -2.0V 20 -1.8V 10 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 40 50 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -6.8A VGS = -4.5V ID = -3.4A 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.02 0.01 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 40 25 C TA = -55oC 125oC o 10 1 0.1 0.01 0.001 0.0001 VGS=0V TA = 125oC 25oC -55oC 30 20 10 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMB506P Rev C1(W) FDMB506P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -6.8A 4 VDS = -5V -15V -10V CAPACITANCE (pF) 3200 2800 2400 2000 1600 1200 800 400 COSS CISS f = 1 MHz VGS = 0 V 3 2 1 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) CRSS 0 5 10 15 20 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s -ID, DRAIN CURRENT (A) 10 8 SINGLE PULSE RJA = 160C/W TA = 25C 6 1 VGS = -4.5V SINGLE PULSE RJA = 160oC/W TA = 25oC 10s DC 4 0.1 2 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 160 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 9. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDMB506P Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 |
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